Size effects of nano-pattern in Si(1 1 1) substrate on the selective growth behavior of GaN nanowires by MOCVD - ScienceDirect
Selective Area Growth - an overview | ScienceDirect Topics
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | Journal of Materials Science: Materials in Electronics
Coalescence of GaP on V-Groove Si Substrates | ACS Applied Electronic Materials
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Selective Area Growth - an overview | ScienceDirect Topics
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Selective Area Growth - an overview | ScienceDirect Topics
Materials | Free Full-Text | Selective-Area Growth Mechanism of GaN Microrods on a Plateau Patterned Substrate
Figure S1. Selective area growth and selectivity. a,b. Schematic... | Download Scientific Diagram
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Crystals | Free Full-Text | Principles of Selective Area Epitaxy and Applications in III–V Semiconductor Lasers Using MOCVD: A Review
Selective-area growth of single-crystal wurtzite GaN nanorods on SiOx/Si(001) substrates by reactive magnetron sputter epitaxy exhibiting single-mode lasing | Scientific Reports
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
Selective-area growth of III-V nanowires and their applications | Journal of Materials Research | Cambridge Core
Photonics | Free Full-Text | Recent Progress in III–V Photodetectors Grown on Silicon
Selective Area Growth of GaN Nanowire: Partial Pressures and Temperature as the Key Growth Parameters | Crystal Growth & Design
Schematic process flow for (a–d) silicon (100) substrate preparation... | Download Scientific Diagram
A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD | Crystal Growth & Design
Coatings | Free Full-Text | Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells
Direct Heteroepitaxy and Selective Area Growth of GaP and GaAs on Si by Hydride Vapor Phase Epitaxy - Strömberg - 2021 - physica status solidi (a) - Wiley Online Library
Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD | Journal of Materials Science: Materials in Electronics
Coalescence of GaP on V-Groove Si Substrates | ACS Applied Electronic Materials
XPS core-level spectra of GaP grown by MOCVD on Si (1 1 2). | Download Scientific Diagram
